, o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 IRFM9240 power mosfet thru-hole (to-254aa) product summary 200v, p-channel part number IRFM9240 rds(on) 0.51u id -11a heaiures: simple drive requirements ease of paralleling hermetically sealed electrically isolated dynamic dv/dt rating light-weight absolute maximum ratings ld@vgs = -10v,tc = 25c id@vgs = -iov,tc = iooc [dm pd @ tc = 25c vgs eas iar ear dv/dt tj tstg parameter continuous drain current continuous drain current pulsed drain current i max. power dissipation linear derating factor gate-to-source voltage single pulse avalanche energy '? avalanche current cd repetitive avalanche energy cd peak diode recovery dv/dt 35 operating junction storage temperature range lead temperature weight -11 -7.0 -44 125 1.0 20 500 -11 12.5 -5.0 -55 to 150 300 ( 0.063 in. (1.6mm) from case for 10s) 9.3 (typical) units a w . c v in j a mj v ns c g nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
IRFM9240 electrical characteristics @tj = 25c (unless otherwise specified) bvdss abvdss'^tj rds(on) vgs(th) 9fs idss igss igss qg qgs qgd td(on) tr td(off) tf ls + ld ciss cqss crss parameter drain-to-source breakdown voltage temperature coefficient of breakdown voltage static drain-to-source on-state resistance gate threshold voltage forward transconductance zero gate voltage drain current gate-to-source leakage forward gate-to-source leakage reverse total gate charge gate-to-source charge gate-to-drain ('miller') charge turn-on delay time rise time turn-off delay time fall time total inductance input capacitance output capacitance reverse transfer capacitance win -200 ? ? ? -2.0 4.0 ? ? ? ? ? ? ? ? ? ? ? ? ? ? typ -0.2 ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? 6.8 1200 570 81 max ? ? 0.51 0.52 -4.0 ? -25 -250 -100 100 60 15 38 35 85 85 65 ? ? units we n v s(n) ma na nc nh pf test conditions vgs - ov, ip - -1.0ma reference to 25c, id = -1.0ma vgs = -iov, id = -7.0a-4; vgs = -iov, id = -11 a 4 vds=vqs. ld = -250ua vds>-15v lds = -7-oa4 vds= -i6ov, vqs= ov vds = -160v vgs = ov,tj = 125c vgs = -2ov vgs =2ov vgs = -10v, id= -11 a vds = -ioov vdd = -ioov id = -11 a, rq=9.1uvgs = -10v measured from drain lead (6mm/ 0.25in. from package) to source lead (6mm/0.25in. from package) vgs = ov, vds = -2sv f = 1.0mhz source-drain diode ratings and characteristics is ism vsd trr qrr ton parameter continuous source current pulse source current (body (body diode) diode) :i; diode forward voltage reverse recovery time reverse recovery charge forward turn-on time min ? ? ? ? typ ? ? ? ? max -11 -44 -4.6 440 7.2 units a v ns uc test conditions tj = 25c, is = -1 1 a, vgs = ov 4; tj = 25c, if = -11 a, di/dt <-100a/us vdd ^ -5ov 4 intrinsic turn-on time is negligible. turn-on speed is substantially controlled by ls + ld. thermal resistance rthjc rthcs rthja parameter junction-to-case case-to-sink junction-to-ambient min ? ? ? typ ? 0.21 ? max 1.0 ? 48 units c/w test conditions typical socket mount
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